A3I25D080GNR1

RF FETs, MOSFETs Overview

The A3I25D080GNR1 is an Airfast RF LDMOS integrated power amplifier operating from 2300 to 2690 MHz. It features an integrated Doherty circuit with on-chip matching, rated for 20 to 32 V operation. Typical performance at 28 Vdc includes 8.3 W average output power with a gain of approximately 29.4 dB and power added efficiency around 36.1% at 2690 MHz. The device utilizes a TO-270WBG-17 plastic package.

RF FETs, MOSFETs Feature Summary

• Integrated Doherty splitter and combiner architecture
• On-chip matching providing 50 ohm input and DC blocking
• RF decoupled drain pins to reduce board space
• Integrated quiescent current temperature compensation with enable/disable function

RF FETs, MOSFETs Applications

• Cellular base station modulation formats
• Wideband RF power amplification in the 2300–2690 MHz range

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Confirm that the component meets RoHS compliance requirements for your intended deployment. Ensure proper handling procedures are followed due to the moisture sensitivity level rating specified in the datasheet.

RF FETs, MOSFETs Selection Notes

Select this component when designing wideband cellular base stations requiring integrated Doherty functionality within the 2300 to 2690 MHz spectrum. Consider the thermal resistance characteristics and the need for heatsinking during fixture testing. Evaluate the compatibility of the 28 Vdc operating voltage with your system power supply design.

RF FETs, MOSFETs Part Context

This part belongs to the NXP Airfast RF LDMOS Integrated Power Amplifier family. It is designed as a multi-stage structure suitable for high-efficiency applications. The device integrates carrier and peaking stages to optimize performance across wide bandwidths typical in modern telecommunications infrastructure.

RF FETs, MOSFETs Replacement Considerations

The A3I25D080N is the non-gull-wing variant of this device family. Verify pinout compatibility if substituting between the standard and gull-wing package versions.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +225 °C.

Does the device include internal matching networks?

Yes, the device features on-chip matching with a 50 ohm input and DC blocking capabilities.

How is quiescent current managed in this amplifier?

It includes integrated quiescent current temperature compensation with an enable or disable function.