A3T19H455W23SR6

$77.96

Description：RF MOSFET
Series：*

SKU:49e7c4388d15 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

A3T19H455W23SR6 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for A3T19H455W23SR6

Description：RF MOSFET
Series：*
Mfr：NXP USA Inc.
Package：Bulk
Technology：-
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Noise Figure：-
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RF FETs, MOSFETs datasheet and documents for A3T19H455W23SR6

A3T19H455W23SR6

RF FETs, MOSFETs Overview

The A3T19H455W23SR6 is an N-Channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 1930 to 1990 MHz frequency range and delivers 81 W average output power at a 30 Vdc drain supply. The device features an asymmetrical Doherty configuration with integrated input and output matching, housed in an ACP-1230S-4L2S package.

RF FETs, MOSFETs Feature Summary

Advanced high-performance in-package Doherty architecture
Designed for wide instantaneous bandwidth applications
Capable of withstanding extremely high output VSWR and broadband operating conditions
Optimized for digital predistortion error correction systems

RF FETs, MOSFETs Applications

Cellular base station amplifiers
Wideband communication infrastructure
Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm package integrity upon receipt as the device utilizes specialized mounting requirements. Ensure compliance with RoHS standards and check for specific ordering suffixes that may affect tape and reel specifications. Validate thermal management capabilities against datasheet limits before deployment.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high linearity and efficiency across broad frequency spans. The integrated matching simplifies circuit layout compared to discrete solutions. Consider the specific gate-source voltage ranges required for Class C operation when designing bias networks. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for continuous wave operations.

RF FETs, MOSFETs Part Context

This transistor belongs to the Airfast RF Power LDMOS series from NXP Semiconductors. It represents a specialized solution for modern wireless infrastructure, combining high power density with robust reliability. The device addresses the increasing demand for spectral efficiency in next-generation mobile networks.