A3V07H600-42NR6

RF FETs, MOSFETs Overview

The A3V07H600-42NR6 is an N-channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates within the 616 to 870 MHz frequency range and delivers 112 W average output power at a 48 Vdc drain supply. The device features an internal input match and utilizes the OM-1230-6L plastic package. Typical Doherty single-carrier W-CDMA performance includes a gain of 16.9 dB, drain efficiency of 52.8%, and ACPR of -30.7 dBc at 717 MHz.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Doherty amplifier configurations
• Digital predistortion error correction systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 indicates a reel quantity of 150 units with a 56 mm tape width on a 13-inch reel. Confirm that the component is supplied in the OM-1230-6L plastic package. Ensure compatibility with the specified thermal management requirements for junction-to-case resistance during procurement planning.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring asymmetrical Doherty topology in the 616–870 MHz band. The device supports up to 105 Vdc drain-source voltage and operates with a junction temperature range up to +225 °C. Consider the internal input matching feature when designing the RF front-end circuitry to simplify impedance matching networks.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor series from NXP Semiconductors. It is specifically engineered for high-efficiency wireless infrastructure. The datasheet revision is 0, dated August 2020. The device is distinct from other variants by its specific pinout and electrical characteristics tailored for Doherty amplification.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +225 °C.

Does the device include an internal input match?

Yes, the part number internally includes an input match.

What is the typical drain efficiency at 717 MHz?

The typical drain efficiency is 52.8% under standard test conditions.