A5G26H110NT4

RF FETs, MOSFETs Overview

The NXP A5G26H110NT4 is a 15 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications. It operates within the 2496 to 2690 MHz frequency range and requires a 48 Vdc drain supply. The device features high terminal impedances for broadband performance and optimized linearized error vector magnitude. Typical performance at 2600 MHz includes a power gain of 17.7 dB, drain efficiency of 51.7%, and saturated output power of 47.9 dBm. It supports wideband ruggedness with a 400 MHz instantaneous bandwidth.

RF FETs, MOSFETs Feature Summary

• Asymmetrical Doherty architecture optimized for massive MIMO active antenna systems in 5G base stations
• High terminal impedances enabling optimal broadband performance across the specified frequency range
• Capable of withstanding extremely high output VSWR and supporting low complexity linearization systems

RF FETs, MOSFETs Applications

• Cellular base station infrastructure
• Massive MIMO active antenna systems
• 5G network deployment

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4 corresponds to the required tape and reel configuration (2,500 units, 16 mm width, 13-inch reel). Confirm that the application design strictly adheres to the guaranteed operating band of 2496 to 2690 MHz, as performance outside this range is not guaranteed by the manufacturer. Ensure thermal management meets the specified channel temperature limitations.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring a 15 W average output power in the 2496–2690 MHz band. The internal matching simplifies circuit design compared to discrete devices. Consider the DFN 7 × 6.5 package dimensions for PCB layout constraints. Verify compatibility with the recommended 48 Vdc operating voltage and biasing sequences for carrier and peaking sides.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power GaN Amplifier series from NXP Semiconductors. It is specifically engineered for high-efficiency amplification in modern wireless communication infrastructure. The device utilizes Gallium Nitride technology to deliver robust performance under high power density conditions typical of contemporary base station architectures.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

RF FETs, MOSFETs FAQ

What is the guaranteed operating frequency range for the A5G26H110N?

Performance is guaranteed for applications operating in the 2496 to 2690 MHz band.

Does the A5G26H110N require external matching networks?

No, the device is internally matched.

What is the maximum forward gate current rating?

The maximum forward gate current is 13.3 mA at a case temperature of 25°C.