A5G38H045N-3700

$290.95

Description：RF MOSFET 6DFN
Series：-

SKU:906d66d617a0 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

A5G38H045N-3700 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET 6DFN. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for A5G38H045N-3700

Description：RF MOSFET 6DFN
Series：-
Mfr：NXP USA Inc.
Package：Bulk
Technology：-
Frequency：-
Gain：-
Voltage - Test：-
Current Rating (Amps)：-
Noise Figure：-
Current - Test：-
Power - Output：5W
Voltage - Rated：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：6-LDFN Exposed Pad
Supplier Device Package：6-PDFN (7x6.5)
Configuration：-

RF FETs, MOSFETs datasheet and documents for A5G38H045N-3700

A5G38H045N-3700

RF FETs, MOSFETs Overview

The NXP A5G38H045N is a 5.4 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications requiring wide instantaneous bandwidth from 3400 to 4000 MHz. It operates at a recommended drain voltage of 48 Vdc with a carrier quiescent current of 35 mA. The device delivers typical saturated output power of 48 W and gain ranging from 12.8 dB to 18.0 dB. Thermal resistance (channel-to-case) is 11.0 °C/W, and it supports a maximum channel temperature of 225 °C.

RF FETs, MOSFETs Feature Summary

Optimized for massive MIMO active antenna systems in 5G base stations
Capable of withstanding extremely high output VSWR and broadband operating conditions
Designed for low complexity linearization systems
Features high terminal impedances for optimal broadband performance

RF FETs, MOSFETs Applications

Cellular base station amplification
Massive MIMO active antenna systems
5G infrastructure deployment

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape and reel specifications. Ensure compatibility with the required DFN package dimensions and thermal management requirements. Confirm that the application environment respects the absolute maximum ratings for gate-source and drain-source voltages to prevent permanent damage.

RF FETs, MOSFETs Selection Notes

Select this component when designing asymmetric Doherty architectures for 3400–4000 MHz bands. Consider its ruggedness against high VSWR and suitability for low-complexity linearization. Evaluate thermal constraints relative to the specified channel-to-case resistance and maximum junction temperature limits during operation.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast series of RF power GaN amplifiers. It utilizes Gallium Nitride technology to achieve high efficiency and power density. The device is internally matched and intended for integration into reference circuits for cellular infrastructure.