A5G38H055NT4

$17.38

Description：RF MOSFET GAN 48V 6DFN
Series：-

SKU:1f3b3a86ab74 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

A5G38H055NT4 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET GAN 48V 6DFN. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for A5G38H055NT4

Description：RF MOSFET GAN 48V 6DFN
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：GaN
Frequency：3.7GHz ~ 3.98GHz
Gain：15dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：45 mA
Power - Output：7.6W
Voltage - Rated：125 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：6-LDFN Exposed Pad
Supplier Device Package：6-PDFN (7x6.5)
Configuration：-

RF FETs, MOSFETs datasheet and documents for A5G38H055NT4

A5G38H055NT4

RF FETs, MOSFETs Overview

The A5G38H055NT4 is a 7.6 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3700 to 3980 MHz. It operates at 48 Vdc with a drain-source voltage rating of 125 Vdc and features high terminal impedances for optimal broadband performance. The device is housed in a DFN 7 x 6.5 plastic package.

RF FETs, MOSFETs Feature Summary

High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for low complexity linearization systems

RF FETs, MOSFETs Applications

Cellular base station applications
Massive MIMO active antenna systems for 5G base stations
Wideband instantaneous bandwidth applications

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4 indicates a 2,500-unit reel quantity on a 16 mm tape width. Confirm the component is an Airfast RF Power GaN Transistor from NXP Semiconductors. Ensure the application strictly operates within the characterized 3700 to 3980 MHz band as performance guarantees are limited to this range.

RF FETs, MOSFETs Selection Notes

Select this component for 5G massive MIMO active antenna systems requiring wide instantaneous bandwidth. It is optimized for low complexity linearization systems and can withstand extremely high output VSWR. Ensure the design supports the required 48 Vdc operating voltage and biasing sequence for depletion mode transistors.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power GaN Transistor family by NXP Semiconductors. It is specifically engineered for cellular infrastructure, targeting 5G base stations with massive MIMO capabilities. The device utilizes GaN-on-Si technology to deliver high efficiency and linearity in demanding RF environments.