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AFGHL30T65RQDN is listed in the Single IGBTs range at ChipApex. The manufacturer field lists onsemi. Its product description is IGBT FIELD STOP 650V 42A TO247. Review the specifications below when checking this part for your BOM.
The onsemi AFGHL30T65RQDN is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) utilizing Field Stop 4 (FS4) technology. It features a 650V collector-emitter voltage rating and a 30A continuous collector current at 100°C case temperature. The device operates with a maximum junction temperature of 175°C and includes a co-packaged soft-recovery diode. It is designed for high-efficiency power conversion in electric vehicle systems, offering low saturation voltage and fast switching characteristics within a TO-247-3 package.
Verify the specific suffix 'RQDN' against official datasheets to confirm the exact pinout, packaging variant, and compliance status. Ensure the component matches the required automotive qualification level for the target application before integration.
Select this IGBT for applications requiring robust performance under high thermal stress and strict automotive reliability standards. Consider the 650V rating and 30A current capacity relative to the system's peak load requirements and thermal management capabilities.
This component belongs to onsemi's AFGL series of automotive IGBTs. It shares the FS4 technology platform with similar models like the AFGHL40T65RQDN, differing primarily in current handling capabilities and specific package configurations tailored for different power density requirements.
Direct replacements may include other FS4 series IGBTs from onsemi with compatible voltage and current ratings. Verify pin compatibility and thermal resistance values when substituting with devices from other manufacturers.
Explore related parts through IGBTs, Transistors, Discrete Semiconductor Products, all product categories.