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AFGY100T65SPD is listed in the Single IGBTs range at ChipApex. The manufacturer field lists onsemi. Its product description is IGBT TRENCH FS 650V 120A TO-247. Review the specifications below when checking this part for your BOM.
The AFGY100T65SPD is a Field Stop Trench IGBT with an integrated Soft Fast Recovery Diode, manufactured by onsemi. It features a 650 V collector-emitter voltage rating and a continuous collector current of 100 A at 25°C. The device utilizes trench gate technology to achieve low conduction losses, with a typical collector-emitter saturation voltage of 1.85 V at 100 A. Designed for high-efficiency applications, it supports junction temperatures up to 175°C and is housed in a TO-247-3 package.
This component belongs to the AFGY series of Field Stop Trench IGBTs from onsemi. It is part of a lineup designed for energy-efficient power conversion, sharing technological similarities with related models like the AFGY120T65SPD but differentiated by its specific 100 A current rating and associated electrical characteristics.
Direct replacements must match the 650V/100A specification and TO-247-3 package. Verify that substitute devices offer comparable soft recovery diode characteristics and thermal resistance to ensure system reliability without redesigning the heatsink or gate drive circuitry.
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