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AFT05MP075NR1 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 12.5V TO270-4. Review the specifications below when checking this part for your BOM.
The AFT05MP075NR1 is a high ruggedness N-Channel enhancement-mode Lateral MOSFET designed for mobile two-way radio applications operating from 136 to 520 MHz. It delivers 70 W output power at 12.5 V with a maximum drain-source voltage of 40 V and continuous drain current of 8 A. The device features a TO-270WB-4 package, operates up to +225 °C junction temperature, and includes integrated ESD protection and stability enhancements.
Verify component authenticity through authorized channels as this part is designated End-of-Life. Confirm that the R1 suffix corresponds to the specific reel configuration of 500 units on a 44 mm tape width. Ensure procurement documentation matches the Freescale Semiconductor manufacturing origin prior to acquisition.
Select this transistor for designs requiring broadband coverage between 136 and 520 MHz. Evaluate thermal management requirements against the specified junction-to-case resistance. Verify compatibility with the TO-270WB-4 footprint and ensure gate drive voltages remain within the +12 Vdc limit.
This component belongs to the Airfast Broadband RF Power LDMOS Transistor series manufactured by Freescale Semiconductor. It serves as a specialized semiconductor solution for high-power RF amplification in communication infrastructure, specifically targeting mobile radio transmitters.
AFT05MP075GNR1
The maximum operating junction temperature range extends up to +225 °C.
It exhibits extreme ruggedness, showing no device degradation when subjected to greater than 65:1 VSWR at all phase angles.
The R1 suffix indicates the device is supplied in Tape and Reel format containing 500 units on a 44 mm tape width.
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