RF FETs, MOSFETs AFT05MP075NR1 product image

AFT05MP075NR1

$17.89
  • Description:RF MOSFET LDMOS 12.5V TO270-4
  • Series:-

SKU:2d16ae121df9 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AFT05MP075NR1 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 12.5V TO270-4. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT05MP075NR1

  • Description:RF MOSFET LDMOS 12.5V TO270-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:520MHz
  • Gain:18.5dB
  • Voltage - Test:12.5 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:70W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:Dual

RF FETs, MOSFETs datasheet and documents for AFT05MP075NR1

AFT05MP075NR1

RF FETs, MOSFETs Overview

The AFT05MP075NR1 is a high ruggedness N-Channel enhancement-mode Lateral MOSFET designed for mobile two-way radio applications operating from 136 to 520 MHz. It delivers 70 W output power at 12.5 V with a maximum drain-source voltage of 40 V and continuous drain current of 8 A. The device features a TO-270WB-4 package, operates up to +225 °C junction temperature, and includes integrated ESD protection and stability enhancements.

RF FETs, MOSFETs Feature Summary

  • Broadband performance enabling full power output across the entire frequency range
  • Extreme ruggedness characterized for severe load mismatch conditions
  • High linearity suitable for TETRA, SSB, and LTE modulation schemes

RF FETs, MOSFETs Applications

  • VHF band mobile radio output stage
  • UHF band mobile radio output stage
  • Large-signal common source amplifier applications in mobile radio equipment

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as this part is designated End-of-Life. Confirm that the R1 suffix corresponds to the specific reel configuration of 500 units on a 44 mm tape width. Ensure procurement documentation matches the Freescale Semiconductor manufacturing origin prior to acquisition.

RF FETs, MOSFETs Selection Notes

Select this transistor for designs requiring broadband coverage between 136 and 520 MHz. Evaluate thermal management requirements against the specified junction-to-case resistance. Verify compatibility with the TO-270WB-4 footprint and ensure gate drive voltages remain within the +12 Vdc limit.

RF FETs, MOSFETs Part Context

This component belongs to the Airfast Broadband RF Power LDMOS Transistor series manufactured by Freescale Semiconductor. It serves as a specialized semiconductor solution for high-power RF amplification in communication infrastructure, specifically targeting mobile radio transmitters.

RF FETs, MOSFETs Replacement Considerations

AFT05MP075GNR1

RF FETs, MOSFETs FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature range extends up to +225 °C.

How does the device handle load mismatches?

It exhibits extreme ruggedness, showing no device degradation when subjected to greater than 65:1 VSWR at all phase angles.

What packaging format is used for the R1 suffix?

The R1 suffix indicates the device is supplied in Tape and Reel format containing 500 units on a 44 mm tape width.

AFT05MP075NR1AFT05MP075NR1
$17.89
Buy Now