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AFT05MS031NR1 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 13.6V TO270-2. Review the specifications below when checking this part for your BOM.
The AFT05MS031NR1 is an N-Channel enhancement-mode LDMOS transistor designed for mobile two-way radio applications from 136 to 520 MHz. It delivers 31 W output power at 13.6 Vdc with a typical gain of 17.7 dB and drain efficiency up to 71.4%. The device features high ruggedness, sustaining >65:1 VSWR without degradation under 3 dB overdrive conditions across the band.
Verify the specific ordering suffix against current manufacturer documentation to confirm package variant and reel specifications. Confirm RoHS compliance status and moisture sensitivity level ratings prior to assembly planning. Ensure compatibility with recommended solder reflow profiles for over-molded plastic packages to maintain device integrity during manufacturing processes.
Select this component for designs requiring wideband coverage across VHF and UHF mobile radio bands. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the integrated ESD protection capabilities when designing input/output matching networks for robust field deployment scenarios.
This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors (formerly Freescale). It is engineered specifically for high-power, high-linearity applications in portable and mobile communication equipment where reliability and broadband performance are critical design constraints.
Consult official substitution lists for verified alternatives. Generic replacements may not match the specific ruggedness or impedance characteristics required for broadband mobile radio output stages.
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