AFT18H357-24NR6

RF FETs, MOSFETs Overview

The AFT18H357-24NR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications in the 1805 to 1880 MHz frequency range. It operates with a drain-source voltage (VDSS) of up to 65 Vdc and an operating voltage (VDD) of 32 Vdc. The device features a maximum junction temperature (TJ) of +225 °C and a thermal resistance (RθJC) of 0.23 °C/W at 75 °C case temperature. Typical performance at 1840 MHz includes a power gain (Gps) of 17.5 dB, drain efficiency (ηD) of 48.7%, and output PAR of 7.6 dB under single-carrier W-CDMA conditions. The part is housed in an OM-1230-4L2L plastic package.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance integrated Doherty architecture
• High thermal conductivity packaging technology for reduced thermal resistance
• Extended negative gate-source voltage range supporting improved Class C operation
• Optimized design compatibility with digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station power amplification
• Single-carrier W-CDMA signal processing
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 corresponds to the required tape and reel configuration, which specifies 150 units per 56 mm tape width on a 13-inch reel. Confirm that the moisture sensitivity level rating of 3 aligns with your assembly floor's storage and reflow soldering constraints. Ensure the component source matches the original manufacturer documentation to guarantee electrical parameter consistency.

RF FETs, MOSFETs Selection Notes

Select this component when designing asymmetrical Doherty amplifier topologies requiring high average power output within the 1805–1880 MHz band. Evaluate the thermal management requirements against the specified 0.23 °C/W junction-to-case resistance. Consider the device's internal matching and its suitability for integration with digital predistortion algorithms to maintain linearity under high peak-to-average ratio signals.

RF FETs, MOSFETs Part Context

This device belongs to the Airfast RF Power LDMOS transistor series from Freescale Semiconductor. It utilizes lateral MOSFET technology optimized for high-efficiency RF power amplification. The product line focuses on providing robust solutions for wireless infrastructure, emphasizing thermal stability and linearity in demanding cellular communication environments.

RF FETs, MOSFETs Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement supports the same asymmetrical Doherty configuration, maintains comparable thermal resistance characteristics, and offers compatible impedance matching networks for the 1805–1880 MHz operational bandwidth.