AFT18HW355SR5

RF FETs, MOSFETs Overview

The AFT18HW355SR5 is a 63-watt asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. Operating within the 1805 to 1880 MHz frequency range, it utilizes N-Channel Enhancement-Mode Lateral MOSFET technology. Typical single-carrier W-CDMA performance at VDD = 28V and IDQA = 1100 mA yields an average output power of 63 Watts with a drain efficiency of approximately 48% and power gain near 15 dB. The device features internal matching on both input and output sides.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Designed for wide instantaneous bandwidth applications
• Greater negative gate-source voltage range for improved Class C operation
• Optimized for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station transmitters
• Wideband multi-carrier amplification
• Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The R5 suffix indicates availability in a tape and reel option, which differs from the standard R6 packaging configuration. Confirm package dimensions and reel specifications with the supplier to ensure compatibility with automated assembly equipment. Cross-reference the document revision date to ensure access to the latest electrical characteristics and load pull data.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring integrated Doherty functionality without external matching networks. Ensure the DC supply can provide sufficient current for the quiescent bias conditions specified. Verify that the thermal management solution can handle the junction-to-case thermal resistance under continuous wave operation. Validate impedance matching using the provided load pull contours for optimal power and efficiency targets.

RF FETs, MOSFETs Part Context

This device belongs to Freescale Semiconductor's Airfast RF power product line, specifically targeting the 1800/1900 MHz cellular bands. It represents an evolution in LDMOS technology aimed at reducing component count and size in modern base station architectures by integrating carrier and peaking amplifier functions into a single package.

RF FETs, MOSFETs Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, compare the maximum drain-source voltage, operating temperature range, and thermal resistance values. Ensure the replacement device supports the required Doherty configuration and provides similar gain flatness across the 1805–1880 MHz bandwidth.