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AFT18P350-4S2LR6 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V NI1230. Review the specifications below when checking this part for your BOM.
The AFT18P350-4S2LR6 is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the 1805 to 1880 MHz frequency range and delivers an average output power of 63 W at a supply voltage of 28 V. The device features a NI-1230-4LS2L package, ensuring reliable performance in demanding RF environments.
Verify the specific ordering suffix (R6) against the manufacturer's current product status, as availability may vary by region. Confirm that the NI-1230-4LS2L package dimensions match your PCB layout requirements. Ensure compliance with RoHS directives if required for your manufacturing process. Cross-reference the part number with official NXP documentation to confirm it is not obsolete or superseded by a newer revision.
Select this component when designing for the 1805-1880 MHz band requiring 63 W average power at 28 V. The symmetrical Doherty design suits applications needing high efficiency and linearity. Consider thermal management capabilities due to the power density. Verify compatibility with existing base station architectures before integration.
This LDMOS transistor belongs to NXP's high-performance RF power device portfolio. It complements other broadband and narrowband RF transistors used in wireless infrastructure. The NI-1230-4LS2L package is standard for high-power RF applications, facilitating heat dissipation and electrical performance in base station environments.
Check for direct substitutes like the AFT18P350-4S2L if the R6 suffix denotes packaging differences only. No other public confirmed substitute part numbers are available for this specific configuration.
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