RF FETs, MOSFETs AFT18P350-4S2LR6 product image

AFT18P350-4S2LR6

$236.56
  • Description:RF MOSFET LDMOS 28V NI1230
  • Series:-

SKU:4ea3e0fa7287 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AFT18P350-4S2LR6 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V NI1230. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT18P350-4S2LR6

  • Description:RF MOSFET LDMOS 28V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:LDMOS
  • Frequency:1.81GHz
  • Gain:16.1dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1:00 AM
  • Power - Output:63W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230-4LS2L
  • Supplier Device Package:NI-1230-4LS2L
  • Configuration:Dual

RF FETs, MOSFETs datasheet and documents for AFT18P350-4S2LR6

AFT18P350-4S2LR6

RF FETs, MOSFETs Overview

The AFT18P350-4S2LR6 is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the 1805 to 1880 MHz frequency range and delivers an average output power of 63 W at a supply voltage of 28 V. The device features a NI-1230-4LS2L package, ensuring reliable performance in demanding RF environments.

RF FETs, MOSFETs Feature Summary

  • Symmetrical Doherty architecture optimized for high-efficiency linear amplification
  • High-performance RF power LDMOS technology for robust operation
  • Designed specifically for cellular base station transmitter modules

RF FETs, MOSFETs Applications

  • Cellular base station transmitters
  • RF power amplifier modules
  • Doherty amplifier configurations

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (R6) against the manufacturer's current product status, as availability may vary by region. Confirm that the NI-1230-4LS2L package dimensions match your PCB layout requirements. Ensure compliance with RoHS directives if required for your manufacturing process. Cross-reference the part number with official NXP documentation to confirm it is not obsolete or superseded by a newer revision.

RF FETs, MOSFETs Selection Notes

Select this component when designing for the 1805-1880 MHz band requiring 63 W average power at 28 V. The symmetrical Doherty design suits applications needing high efficiency and linearity. Consider thermal management capabilities due to the power density. Verify compatibility with existing base station architectures before integration.

RF FETs, MOSFETs Part Context

This LDMOS transistor belongs to NXP's high-performance RF power device portfolio. It complements other broadband and narrowband RF transistors used in wireless infrastructure. The NI-1230-4LS2L package is standard for high-power RF applications, facilitating heat dissipation and electrical performance in base station environments.

RF FETs, MOSFETs Replacement Considerations

Check for direct substitutes like the AFT18P350-4S2L if the R6 suffix denotes packaging differences only. No other public confirmed substitute part numbers are available for this specific configuration.

AFT18P350-4S2LR6AFT18P350-4S2LR6
$236.56
Buy Now