AFT21H350W03SR6

$165.33

Description：RF MOSFET LDMOS 28V NI1230
Series：-

SKU:bf46b13b8746 Category: RF FETs, MOSFETs Brand: NXP Semiconductors

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Product introduction

AFT21H350W03SR6 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP Semiconductors. Its product description is RF MOSFET LDMOS 28V NI1230. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT21H350W03SR6

Description：RF MOSFET LDMOS 28V NI1230
Series：-
Mfr：NXP Semiconductors
Package：Bulk
Technology：LDMOS
Frequency：2.11GHz ~ 2.17GHz
Gain：16.4dB
Voltage - Test：28 V
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：763 mA
Power - Output：63W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：NI-1230-4S
Supplier Device Package：NI-1230-4S
Configuration：N-Channel

RF FETs, MOSFETs datasheet and documents for AFT21H350W03SR6

AFT21H350W03SR6

RF FETs, MOSFETs Overview

The AFT21H350W03SR6 is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 2110 to 2170 MHz frequency range and delivers a typical average output power of 63 Watts at 28 Volts. The device features N-Channel enhancement-mode lateral MOSFET technology housed in an NI-1230S-4S package.

RF FETs, MOSFETs Feature Summary

Advanced high-performance integrated Doherty architecture
Optimized for wide instantaneous bandwidth applications
Extended negative gate-source voltage range for improved Class C operation
Compatible with digital predistortion error correction systems

RF FETs, MOSFETs Applications

Cellular base station amplifiers
Wideband communication infrastructure
Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status prior to integration. Ensure thermal management meets specified junction temperature limits. Validate DC biasing parameters against functional test conditions. Review ESD protection characteristics during handling procedures.

RF FETs, MOSFETs Selection Notes

Evaluate suitability for specific carrier configurations requiring asymmetric Doherty topologies. Assess thermal resistance requirements relative to case operating temperatures. Verify impedance matching networks align with provided load pull data. Consider input signal peak-to-average ratio constraints for optimal efficiency.

RF FETs, MOSFETs Part Context

This component belongs to the Airfast RF Power LDMOS transistor series developed by Freescale Semiconductor, now NXP Semiconductors. The product line targets high-efficiency RF power amplification for wireless telecommunications infrastructure, utilizing advanced silicon lateral diffusion metal oxide semiconductor technology.