RF FETs, MOSFETs AFT21S232SR3 product image

AFT21S232SR3

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:9aff256d7873 Category: Brand:

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AFT21S232SR3 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V NI780. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT21S232SR3

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz
  • Gain:16.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.5 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-780S
  • Supplier Device Package:NI-780S
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for AFT21S232SR3

AFT21S232SR3

RF FETs, MOSFETs Overview

The AFT21S232SR3 is a high-power RF transistor belonging to the AFT series, designed for advanced radio frequency applications. It operates within the Ka-band spectrum, providing significant output power and gain suitable for demanding wireless communication systems. The component utilizes robust semiconductor technology to ensure reliable performance under high-frequency conditions. Its construction supports efficient signal amplification with thermal stability required for continuous operation in base station and point-to-point microwave links.

RF FETs, MOSFETs Feature Summary

  • High-power RF amplification capability
  • Ka-band frequency operation
  • Robust thermal stability design

RF FETs, MOSFETs Applications

  • Base station infrastructure
  • Point-to-point microwave links
  • Wireless communication systems

RF FETs, MOSFETs Procurement Notes

Verify the exact suffix SR3 against official NXP documentation to confirm pinout and packaging specifications. Ensure compatibility with existing thermal management solutions and biasing circuits. Cross-reference the datasheet for absolute maximum ratings to prevent device failure during integration.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring high linearity and power efficiency in the Ka-band. Evaluate thermal resistance parameters to determine appropriate heatsinking requirements. Compare gain and noise figure specifications against system link budget requirements to ensure optimal signal integrity.

RF FETs, MOSFETs Part Context

This part belongs to NXP's portfolio of high-performance RF transistors. It complements other components in the AFT series, offering scalable solutions for various frequency bands. The series is engineered to meet the rigorous demands of modern telecommunications infrastructure.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify electrical parameter equivalence before replacing. Ensure mechanical footprint compatibility if direct board replacement is required.

AFT21S232SR3AFT21S232SR3

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