AFV121KHSR5

RF FETs, MOSFETs Overview

The AFV121KHSR5 is an RF Power LDMOS transistor designed for pulse applications operating at frequencies from 960 to 1215 MHz. It features a peak output power of 1000 W with a drain-source voltage rating of 112 Vdc and a gate-source voltage range of -6.0 to +10 Vdc. The device operates within a case temperature range of -40 to 150 °C and supports junction temperatures up to 225 °C. It includes integrated ESD protection passing 2500 V via the Human Body Model. Thermal impedance values are 0.017 °C/W for short pulses (128 µsec) and 0.050 °C/W for long pulses (2 msec).

RF FETs, MOSFETs Feature Summary

• Internally input and output matched for broadband operation and ease of use.
• High ruggedness capable of handling greater than 20:1 VSWR without degradation.
• Integrated ESD protection with an extended negative voltage range for improved Class C operation.

RF FETs, MOSFETs Applications

• Distance Measuring Equipment (DME)
• Secondary Radars such as Mode S ELM Interrogators
• Mode S Transponders including TCAS and ADS-B systems

RF FETs, MOSFETs Procurement Notes

Verify the specific package variant, as the 'HS' suffix denotes an earless NI-1230S-4S package. Confirm that the R5 suffix indicates a 50-unit reel quantity on 56 mm tape. Ensure compatibility with the required thermal management solutions for high peak power dissipation. Validate that the application environment respects the maximum junction temperature limits specified in the datasheet.

RF FETs, MOSFETs Selection Notes

Select this component for high-power pulse applications requiring robust load mismatch tolerance. The internal matching simplifies circuit design for broadband operations between 960 and 1215 MHz. Consider the push-pull or quadrature configuration options for system integration. Verify that the drive power requirements align with the typical gain characteristics provided in the reference circuits.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS transistor family from NXP Semiconductors (formerly Freescale). It is specifically engineered for air traffic control systems and radar interrogators. The device utilizes lateral MOSFET technology to deliver high peak power outputs while maintaining efficiency under pulsed conditions.

RF FETs, MOSFETs Replacement Considerations

The datasheet lists AFV121KH and AFV121KGS as related devices within the same series. These variants share identical electrical specifications but differ in package style. The KH variant uses an eared NI-1230H-4S package, while the GS variant uses a gull wing NI-1230GS-4L package. Verify mechanical fit before substitution.

RF FETs, MOSFETs FAQ

What is the maximum VSWR the device can withstand?

The device is qualified to handle greater than 20:1 VSWR at all phase angles without degradation when operated under specified pulse conditions.

How does the ESD protection perform?

The device passes 2500 V using the Human Body Model, 2000 V using the Charge Device Model, and 250 V using the Machine Model.

What is the recommended quiescent current for optimal performance?

Typical performance data is characterized with a total quiescent current (IDQ A+B) of 100 mA in the reference circuits.