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AIHD10N60RATMA1 is listed in the Single IGBTs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGBT TRENCH FS 600V 20A TO252-3. Review the specifications below when checking this part for your BOM.
AIHD10N60RATMA1 is a silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the TRENCHSTOP RC series. It features a single configuration housed in a DPAK-3 (TO-252-3) surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 10 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 150 W. It operates within a temperature range of -40°C to +175°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly. Validate package integrity against TO-252-3 specifications before soldering.
Select this component for designs requiring fast switching speeds and integrated freewheeling capabilities. The TO-252-3 package suits space-constrained surface-mount layouts. Evaluate thermal management needs based on the 150 W dissipation rating and operating temperature limits.
This IGBT belongs to Infineon's TRENCHSTOP RC family, which emphasizes reduced switching times compared to standard variants. The AIHD10N60RATMA1 integrates a fast recovery diode, simplifying circuit topology by eliminating the need for external parallel diodes in bridge configurations.
IKD10N60RATMA1 shares the same package and similar electrical ratings but may differ in specific switching characteristics. Verify pinout compatibility and thermal performance before substitution.
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