FET, MOSFET Arrays ALD210808SCL product image

ALD210808SCL

$3.62
  • Description:MOSFET 4N-CH 10.6V 0.08A 16SOIC
  • Series:EPAD®, Zero Threshold™

SKU:86cce169d6be Category: Brand:

  
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ALD210808SCL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Advanced Linear Devices Inc.. Its product description is MOSFET 4N-CH 10.6V 0.08A 16SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ALD210808SCL

  • Description:MOSFET 4N-CH 10.6V 0.08A 16SOIC
  • Series:EPAD®, Zero Threshold™
  • Mfr:Advanced Linear Devices Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel, Matched Pair
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):10.6V
  • Current - Continuous Drain (Id) @ 25°C:80mA
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:500mW
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for ALD210808SCL

ALD210808SCL

FET, MOSFET Arrays Overview

The ALD210808SCL is a precision enhancement mode N-Channel EPAD® MOSFET array manufactured by Advanced Linear Devices Inc. It features four monolithic matched pairs with a gate threshold voltage (VGS(th)) of +0.80V ±0.01V at IDS = 10µA and VDS = 0.1V. The device operates within a drain-source voltage range up to 10.6V and supports continuous drain currents of 80mA. Key electrical parameters include an on-resistance (RDS(ON)) of 25Ω, input capacitance of 15pF, and power dissipation of 500mW. It is housed in a 16-SOIC package and functions within a temperature range of 0°C to +70°C.

FET, MOSFET Arrays Feature Summary

  • Precision factory-matched gate threshold voltage for minimal offset
  • Enhanced forward transconductance and output conductance at low voltages
  • Excellent temperature tracking characteristics across matched pairs
  • Sub-threshold operation capability for nanopower applications

FET, MOSFET Arrays Applications

  • Low overhead current mirrors and current sources
  • Zero Power Normally-On circuits
  • Very low voltage analog and digital circuits
  • High gain differential amplifier input stages
  • Energy harvesting detectors

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Confirm that the component meets RoHS compliance requirements if applicable to the design. Ensure static control procedures are observed during handling due to ESD sensitivity. Cross-reference the part number with the latest datasheet version to validate operating temperature ranges and electrical specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when precise matching between multiple MOSFETs is required for low offset voltage applications. Consider the +0.80V threshold voltage for designs needing positive gate bias to turn on. Evaluate the sub-threshold operation capabilities for ultra-low power consumption needs. Ensure the supply voltage range aligns with the device's breakdown voltage and power dissipation limits.

FET, MOSFET Arrays Part Context

The ALD210808SCL belongs to the ALD2108xx series of precision enhancement mode EPAD® MOSFET arrays. This family includes various threshold voltage options ranging from depletion to high enhancement modes. The SCL suffix indicates a lead-free 16-pin SOIC package variant. These devices are designed for applications requiring tight parametric control and temperature stability.

FET, MOSFET Arrays Replacement Considerations

ALD210808ASCL: Same functional specifications but packaged in a tube instead of tape and reel.

ALD210808SCLALD210808SCL
$3.62
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