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Product Detailed Parameters
- Description：MOSFET N-CH 100V 60A TO-220
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：972 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-2
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Overview
The AM60N10-70P is an N-channel power MOSFET manufactured by Analog Power Inc. It features a 100V drain-source voltage rating and supports a continuous drain current of 60A at case temperature. The device is housed in a TO-220 through-hole package, suitable for thermal management applications requiring up to 300W power dissipation. Key electrical characteristics include a gate-source threshold voltage with a minimum specification of 1V under defined test conditions.
Feature Summary
- N-channel enhancement mode construction
- Through-hole TO-220 packaging for board mounting
- High power dissipation capability
Applications
- Power switching circuits
- DC-DC converter designs
- Motor control systems
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. when sourcing this component. Confirm the package type is TO-220 and the channel configuration is N-Channel. Ensure the voltage rating matches the 100V requirement for your specific circuit design before procurement.
Selection Notes
Select this component for applications requiring robust N-channel switching with moderate voltage ratings. The TO-220 package facilitates effective heat sinking for high-current operations. Verify that the 100V breakdown voltage aligns with the system's maximum operating voltages to ensure reliable performance.
Part Context
This part belongs to the discrete semiconductor category, specifically single FETs and MOSFETs within the Analog Power Inc. portfolio. It serves as a fundamental building block for power electronics, providing controlled conductivity for managing electrical loads in various industrial and consumer electronic devices.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult official distributor databases or manufacturer cross-reference guides for compatible alternatives if this specific model is unavailable.
