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Product Detailed Parameters
- Description：MOSFET N-CH 80V 60A DFN5X6
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7442 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerVDFN
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Overview
The AM7484N is an N-Channel MOSFET featuring a Drain-Source Voltage (VDS) of 80 V and a Gate-Source Voltage (VGS) rating of ±20 V. It utilizes low rDS(on) trench technology, achieving 8.9 mΩ at VGS = 10 V and 9.9 mΩ at VGS = 4.5 V. The device supports a continuous drain current (ID) of 19 A at 25°C and 16 A at 70°C, with a pulsed drain current (IDM) of 75 A. Thermal resistance (RθJA) is rated at 65 °C/W. Operating junction and storage temperatures range from -55 to 150 °C.
Feature Summary
- Low on-resistance achieved through trench technology
- Fast switching speed capabilities
- Low thermal impedance design
Applications
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits
Procurement Notes
Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement. Confirm that the DFN5X6-8L package dimensions align precisely with the target PCB footprint requirements. Ensure that the component sourcing channel provides valid traceability for the Analog Power Inc. brand.
Selection Notes
Select this component when an 80-V N-Channel MOSFET is required for high-efficiency power conversion. The low gate charge and fast switching characteristics make it suitable for applications demanding rapid transitions. Evaluate the thermal management strategy based on the 65 °C/W junction-to-ambient resistance rating under steady-state conditions.
Part Context
This component belongs to the Analog Power Inc. lineup of single N-Channel MOSFETs designed for general-purpose power switching. It is housed in a DFN5X6-8L surface-mount package, providing a compact form factor suitable for modern electronic designs requiring efficient heat dissipation within limited board space.
Replacement Considerations
Consult the official Analog Power Inc. catalog or authorized distributors for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' components without cross-referencing absolute maximum ratings and electrical parameters.
FAQ
What is the typical forward transconductance (gfs) for the AM7484N?
The typical forward transconductance is 28 S, measured at VDS = 15 V and ID = 10 A.
How does the on-resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises, following the characteristic curve provided in the typical electrical characteristics section.
