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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 35A TO252-4
- Series：*
- Mfr：Analog Power Inc.
- Package：Strip
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc), 20A (Tc)
- Rds On (Max) @ Id, Vgs：24mOhm @ 20A, 10V, 85mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V, 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1422pF @ 15V, 1143pF @ 15V
- Power - Max：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4
- Grade：-
- Qualification：-
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Overview
The Analog Power AMD560C is a dual N-channel and P-channel MOSFET featuring a 60V drain-source voltage rating. It supports continuous drain currents of 35A for the N-channel and -20A for the P-channel at 25°C case temperature. The device utilizes low on-resistance trench technology, achieving typical rDS(on) values of 28mΩ at VGS=10V for the N-channel and 80mΩ at VGS=-10V for the P-channel. Operating junction temperatures range from -55°C to 175°C with a maximum power dissipation of 50W.
Feature Summary
- Low thermal impedance design for efficient heat transfer
- Fast switching speed capabilities
- Trench technology for reduced on-resistance
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific package type and tape/reel specifications against the official datasheet before ordering. Confirm that the supplier provides the correct Analog Power Inc. part number AMD560C. Ensure compatibility with your system's voltage and current requirements by checking the absolute maximum ratings.
Selection Notes
Select this component for applications requiring combined N-channel and P-channel switching in a single package. Consider the 60V rating and 50W power dissipation limits when designing thermal management solutions. Verify gate drive voltages align with the specified thresholds for optimal on-resistance performance.
Part Context
This component belongs to the Analog Power Inc. MOSFET family, specifically designed for power switching applications. It integrates both N-channel and P-channel devices to simplify circuit layouts in dual-supply or synchronous rectification designs.
Replacement Considerations
Check for direct pin-compatible alternatives from other manufacturers offering similar 60V dual MOSFET configurations. Ensure replacement parts meet the same thermal resistance and current handling specifications.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
What is the typical on-resistance for the N-channel at VGS=4.5V?
The typical on-resistance for the N-channel at VGS=4.5V is 30mΩ.
Is the device suitable for automotive applications?
Yes, the datasheet lists automotive systems as a typical application.
