Single Bipolar Transistors AMMBT5551-HF product image

AMMBT5551-HF

$0.06
  • Description:TRANS NPN 160V 0.6A SOT-23-3
  • Series:-

SKU:c3c3f6e0e0c3 Category: Brand:

  
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AMMBT5551-HF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Comchip Technology. Its product description is TRANS NPN 160V 0.6A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for AMMBT5551-HF

  • Description:TRANS NPN 160V 0.6A SOT-23-3
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for AMMBT5551-HF

AMMBT5551-HF

Single Bipolar Transistors Overview

The AMMBT5551-HF is an NPN bipolar junction transistor manufactured by Comchip Technology, housed in a surface-mount SOT-23-3 package. It features a collector-emitter breakdown voltage (VCEO) of 160 V and a collector-base breakdown voltage (VCBO) of 180 V. The device supports a maximum continuous collector current (IC) of 600 mA with a power dissipation rating of 300 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at IC=10mA, and a transition frequency (fT) of 100 MHz. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar die construction for reliable performance
  • Designed for medium power amplification and switching applications
  • Complementary PNP type available as MMBT5401-G

Single Bipolar Transistors Applications

  • Medium power amplification circuits
  • General purpose switching applications
  • RF signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm the 'AMMBT' prefix validity, as standard listings typically use 'MMBT'. Ensure RoHS compliance matches project requirements, noting that the '-HF' suffix indicates halogen-free status. Cross-reference datasheet revisions to confirm pinout consistency and thermal resistance values before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling up to 160V in a compact SOT-23 form factor. Consider the 600mA current capability and 300mW power dissipation limits when designing heat management strategies. Verify that the required hFE gain band meets circuit beta stability needs, and ensure the operating temperature range aligns with the system's environmental constraints.

Single Bipolar Transistors Part Context

This component belongs to the general-purpose NPN transistor family offered by Comchip Technology. It serves as a small-signal device suitable for various electronic applications requiring moderate voltage and current ratings. The SOT-23-3 packaging facilitates automated surface-mount assembly, making it compatible with standard PCB manufacturing processes for consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The complementary PNP counterpart is the MMBT5401-G. Other manufacturers produce equivalent devices under the MMBT5551 designation, such as those from Diodes Incorporated or Micro Commercial Components, provided they meet the same 160V/600mA/SOT-23 specifications.

AMMBT5551-HFAMMBT5551-HF
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