AMR075V120H1

$9.02

Description：1200V 75MR, TO247-4L, INDUSTRIAL
Series：-
Mfr：Luminus Devices Inc.
Package：Tube

SKU:8c2ce30363c7 Category: Single FETs, MOSFETs Brand: Luminus Devices Inc.

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Product introduction

Product Detailed Parameters

Description：1200V 75MR, TO247-4L, INDUSTRIAL
Series：-
Mfr：Luminus Devices Inc.
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：92mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：61 nC @ 15 V
Vgs (Max)：+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds：882 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：170W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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AMR075V120H1

Overview

The AMR075V120H1 is a high-power Silicon Carbide (SiC) MOSFET transistor manufactured by Analog Power Conversion-Electronics, LLC. It features a TO-247-4L package and is designed for demanding power conversion applications. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a continuous drain current of 35 A at 25°C case temperature, and a typical on-resistance of 72 mΩ at 15 V gate drive. The device operates within a junction temperature range of -55°C to 175°C.

Feature Summary

High blocking voltage combined with low on-resistance
High switching speed with low capacitance
Very low switching losses
Excellent avalanche ruggedness

Applications

Solar inverters
Uninterrupted power supplies
Switch mode power supplies
Motor drives

Procurement Notes

Verify the manufacturer designation as Analog Power Conversion-Electronics, LLC, distinct from Luminus Devices. Confirm the specific package type is TO-247-4L and check for preliminary datasheet status which may indicate ongoing validation. Ensure compatibility with recommended solder pad layouts provided in official documentation before integration.

Selection Notes

Select this component for high-efficiency power conversion designs requiring robust thermal performance. Consider the 1200 V rating for high-voltage topologies and the low reverse recovery charge for fast-switching requirements. Evaluate thermal management needs based on the specified junction-to-case thermal resistance and derating curves for continuous operation.

Part Context

This SiC MOSFET belongs to a class of wide-bandgap semiconductor devices optimized for high-frequency and high-temperature environments. Unlike traditional silicon counterparts, it offers superior switching characteristics and reduced conduction losses. The TO-247-4L form factor facilitates efficient heat dissipation through direct mounting to cold plates or heatsinks.