AMR1K0V170E1

$4.62

Description：1700V 1000MR, TO247-3L, INDUSTRI
Series：-
Mfr：Luminus Devices Inc.
Package：Tube

SKU:5c8ddc3eb757 Category: Single FETs, MOSFETs Brand: Luminus Devices Inc.

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Product introduction

Product Detailed Parameters

Description：1700V 1000MR, TO247-3L, INDUSTRI
Series：-
Mfr：Luminus Devices Inc.
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id：4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：16.7 nC @ 20 V
Vgs (Max)：+27V, -10V
Input Capacitance (Ciss) (Max) @ Vds：227 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3L
Package / Case：TO-247-3

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AMR1K0V170E1

Overview

The AMR1k0V170E1 is a Silicon Carbide (SiC) Power MOSFET manufactured by Luminus Devices Inc. It features a 1700 V drain-source breakdown voltage and operates within a junction temperature range of -55°C to 175°C. The device provides an 8 A continuous drain current and supports a 19 A pulsed drain current. Its typical on-resistance is 1.0 Ω at 25°C, with a maximum of 1.2 Ω. Key dynamic parameters include a total gate charge of 16.7 nC and an avalanche energy rating of 150 mJ. The component is housed in a TO-247-3L package.

Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
Very low switching losses and high switching speed due to low capacitance
Excellent avalanche ruggedness rated at 150 mJ
Fast and robust intrinsic body diode with low reverse recovery characteristics

Applications

Solar inverters
Uninterrupted power supplies
Switch mode power supplies
Motor drives

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247-3L package dimensions align with your PCB footprint requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Validate that operating conditions remain strictly within the absolute maximum ratings defined in the technical specifications.

Selection Notes

Select this component for applications requiring high-voltage SiC performance with robust avalanche capabilities. Consider the 1700 V rating for systems exceeding standard silicon limits. Evaluate the 1.0 Ω on-resistance against conduction loss requirements. Assess the 16.7 nC gate charge for driver capability needs. Verify compatibility with the recommended 0V to +20V gate drive signals for optimal switching performance.

Part Context

This part belongs to the SiC Power MOSFET transistor category from Luminus Devices Inc. It utilizes Silicon Carbide technology to achieve superior thermal and electrical performance compared to traditional silicon devices. The TO-247-3L package facilitates effective heat dissipation for high-power density applications. The product is designed to meet RoHS compliance standards.