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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 26.5A/52.3A DFN
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta), 26.5A (Tc), 11.6A (Ta), 52.3A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V, 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V, 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：450pF @ 40V, 900pF @ 40V
- Power - Max：2W (Ta), 21W (Tc), 2W (Ta), 41W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AMR980N is a dual N-channel MOSFET array manufactured by Analog Power Inc. It utilizes a high cell density trench process to achieve low on-resistance and minimal power loss. The device is housed in a DFN surface-mount package. Key electrical parameters include a drain-source voltage of 80V. Continuous drain current ratings are specified at 26.5A under case temperature conditions and 8.2A under ambient temperature conditions. Maximum power dissipation values are 21W at case temperature and 2W at ambient temperature.
Feature Summary
- Dual N-channel configuration within a single compact package
- High cell density trench process technology for efficiency
- Low on-resistance characteristics to minimize conduction losses
Applications
- Power management circuits requiring dual switch functionality
- DC-DC converter topologies utilizing complementary or parallel switching
- Battery protection modules needing integrated N-channel control
Procurement Notes
Verify the specific datasheet version from Analog Power Inc. to confirm exact thermal resistance values and pinout configurations. Ensure that the DFN package dimensions match the target PCB footprint requirements. Cross-reference the 80V rating with system voltage headroom needs. Confirm RoHS compliance status through official manufacturer documentation before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel solution is required in a small form factor. The 80V rating suits medium-voltage applications. Evaluate thermal performance based on the 2W ambient dissipation limit if heatsinking is not utilized. Compare on-resistance specifications against alternative discrete MOSFETs to determine space and efficiency trade-offs for the specific power stage design.
Part Context
Analog Power Inc. specializes in power management semiconductors, including N-Channel and P-Channel MOSFETs. The company focuses on producing optimized products with low on-resistance across various packages like DFN and SO. This part fits within their portfolio of miniature surface-mount devices designed for efficient power conversion and management applications.
Replacement Considerations
Publicly confirmed substitute part numbers for the AMR980N are not available in the provided source material. Engineers should consult Analog Power Inc. directly for qualified alternatives or verify compatibility with other dual N-channel MOSFET arrays meeting the 80V and current specifications.
