SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4405L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage of -30V and a continuous drain current of -6A at VGS=-10V. Maximum on-resistance is specified as less than 50mΩ at VGS=-10V and less than 85mΩ at VGS=-4.5V. It is housed in an 8-SOIC package with a maximum power dissipation of 3.1W at 25°C ambient temperature.
Verify the component status, as the AO4405L is listed as obsolete and no longer manufactured. Confirm availability of direct substitutes such as the AO4405 from the same manufacturer. Ensure that any replacement part matches the electrical specifications and physical footprint requirements for your specific design constraints before procurement.
Select this component for designs requiring a 30V P-Channel MOSFET in an 8-SOIC package. Consider the thermal resistance characteristics and power dissipation limits when designing the PCB layout. Verify compatibility with drive voltages of 4.5V and 10V for optimal on-resistance performance.
The AO4405L belongs to the AO44 series of P-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for consumer market applications using advanced trench technology. The 'L' suffix typically denotes a Green Product ordering option, indicating compliance with environmental standards without altering electrical function.
Direct substitute: AO4405
Yes, the device has low gate charge (11 nC max at 10V) and fast switching times (turn-on rise time 5.5 ns, turn-off fall time 7 ns), making it suitable for PWM applications.
The absolute maximum gate-source voltage (VGS) is ±20V.