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Product Detailed Parameters
- Description：MOSFET N CH 30V 10A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：715 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4496 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 11.6 A at 25°C. The device utilizes TrenchFET technology to achieve low on-resistance, optimized for high-side synchronous rectifier operation. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 surface mount package.
Feature Summary
- Utilizes TrenchFET power MOSFET technology for enhanced performance
- Optimized specifically for high-side synchronous rectifier applications
- Undergoes 100% gate resistance testing for reliability
- Verified with 100% unclamped inductive switching (UIS) testing
Applications
- Notebook CPU core high-side switch
- DC-DC converter applications
- High-side synchronous rectification circuits
Procurement Notes
Verify the specific datasheet version from Alpha & Omega Semiconductor or authorized distributors to confirm exact electrical parameters and pinout configurations. Ensure compliance with RoHS standards and check for automotive qualification requirements if applicable to the target design environment.
Selection Notes
Select this component for designs requiring a 30V N-channel MOSFET with high current handling capabilities. Consider its suitability for synchronous rectification where low on-resistance and fast switching are critical. Evaluate thermal management needs based on the specified power dissipation limits in the SOIC-8 package.
Part Context
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, leveraging proprietary TrenchFET technology. It is designed as a replacement or alternative for similar 30V N-channel devices in portable electronics and power management systems, offering improved efficiency over standard planar technologies.
Replacement Considerations
Check for direct equivalents such as the DMG4496SSSQ-13 from Diodes Incorporated, which shares similar voltage and current ratings. Verify pin compatibility and thermal characteristics before substitution.
