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The AO4613 is a dual complementary MOSFET in an SOIC-8 package, integrating one N-channel and one P-channel device. The N-channel unit features a drain-source voltage of 30V, continuous drain current of 7.2A at 25°C, and on-resistance below 24mΩ at VGS=10V. The P-channel unit offers a drain-source voltage of -30V, continuous drain current of -6.1A at 25°C, and on-resistance below 37mΩ at VGS=-10V. Both channels are rated for a junction temperature range of -55°C to 150°C.
Verify the component's qualification status against specific application requirements before integration. The datasheet explicitly states that this product is designed and qualified solely for the consumer market. Applications involving life support devices or systems are not authorized by Alpha & Omega Semiconductor. Confirm compliance with these restrictions during the procurement phase.
Select the AO4613 when a compact solution requires both N-channel and P-channel switching capabilities within a single footprint. Ensure the design accommodates the specified thermal resistance values and operates within the defined voltage and current limits for both channels simultaneously.
This component belongs to the Alpha & Omega Semiconductor lineup of discrete power devices. It utilizes advanced trench technology to provide optimized performance characteristics suitable for general-purpose switching applications in consumer electronics.
No public confirmed substitute part numbers are available in the provided documentation.
The AO4613 has a maximum repetitive avalanche energy rating of 2mJ for the N-channel and 1.44mJ for the P-channel, measured with an inductance of 0.1mH.
For the N-channel, RDS(ON) is less than 24mΩ at VGS=10V and less than 40mΩ at VGS=4.5V. For the P-channel, it is less than 37mΩ at VGS=-10V and less than 60mΩ at VGS=-4.5V.
No. The product is designed and qualified for the consumer market only. Applications as critical components in life support devices or systems are not authorized.