AO4613

AO4613

$0.22
  • Description:MOSFET N/P-CH 30V 8SOIC
  • Series:-

SKU:86195465baa4 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:24mOhm @ 7.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:630pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

Download product information

AO4613

Overview

The AO4613 is a dual complementary MOSFET in an SOIC-8 package, integrating one N-channel and one P-channel device. The N-channel unit features a drain-source voltage of 30V, continuous drain current of 7.2A at 25°C, and on-resistance below 24mΩ at VGS=10V. The P-channel unit offers a drain-source voltage of -30V, continuous drain current of -6.1A at 25°C, and on-resistance below 37mΩ at VGS=-10V. Both channels are rated for a junction temperature range of -55°C to 150°C.

Feature Summary

  • Complementary N-channel and P-channel MOSFETs integrated into a single surface-mount package.
  • Advanced trench technology utilized to achieve low gate charge and excellent on-resistance.
  • ESD protected structure with 100% UIS (Unclamped Inductive Switching) testing.

Applications

  • Level shifted high side switch configurations
  • Consumer market power management circuits

Procurement Notes

Verify the component's qualification status against specific application requirements before integration. The datasheet explicitly states that this product is designed and qualified solely for the consumer market. Applications involving life support devices or systems are not authorized by Alpha & Omega Semiconductor. Confirm compliance with these restrictions during the procurement phase.

Selection Notes

Select the AO4613 when a compact solution requires both N-channel and P-channel switching capabilities within a single footprint. Ensure the design accommodates the specified thermal resistance values and operates within the defined voltage and current limits for both channels simultaneously.

Part Context

This component belongs to the Alpha & Omega Semiconductor lineup of discrete power devices. It utilizes advanced trench technology to provide optimized performance characteristics suitable for general-purpose switching applications in consumer electronics.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum repetitive avalanche energy rating?

The AO4613 has a maximum repetitive avalanche energy rating of 2mJ for the N-channel and 1.44mJ for the P-channel, measured with an inductance of 0.1mH.

How does the on-resistance vary with gate-source voltage?

For the N-channel, RDS(ON) is less than 24mΩ at VGS=10V and less than 40mΩ at VGS=4.5V. For the P-channel, it is less than 37mΩ at VGS=-10V and less than 60mΩ at VGS=-4.5V.

Is the AO4613 suitable for medical life support systems?

No. The product is designed and qualified for the consumer market only. Applications as critical components in life support devices or systems are not authorized.

AO4613AO4613
$0.22
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