AO4801AL_001

AO4801AL_001

  • Description:MOSFET 2P-CH 30V 5A 8SOIC
  • Series:-

SKU:915f814b6805 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 5A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A
  • Rds On (Max) @ Id, Vgs:48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:780pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4801AL_001

Overview

The AO4801AL is a dual P-channel MOSFET from Alpha & Omega Semiconductor, packaged in an SOIC-8. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -5.6A at VGS=-10V. The device exhibits low on-resistance: less than 42mΩ at VGS=-10V, less than 52mΩ at VGS=-4.5V, and less than 75mΩ at VGS=-2.5V. It includes 100% UIS testing and gate resistance verification. Thermal characteristics include a maximum junction temperature of 150°C and a junction-to-lead thermal resistance (RθJL) of 62.5°C/W.

Feature Summary

  • Dual configuration combining two independent P-channel MOSFETs in a single package for space-efficient designs.
  • Advanced trench MOSFET technology engineered to deliver extremely low static drain-source on-resistance across various gate drive voltages.
  • Validated robustness through 100% unclamped inductive switching (UIS) testing and gate resistance verification.

Applications

  • Load switch applications requiring efficient power management.
  • Pulse Width Modulation (PWM) control circuits.
  • Consumer electronics power distribution systems.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets consumer market qualification standards, as critical life support applications are explicitly excluded from authorization by the manufacturer.

Selection Notes

Select this component when a dual P-channel configuration is required within a compact SOIC-8 footprint. Ensure the application gate drive voltage aligns with the specified RDS(ON) performance curves, particularly noting the resistance increase at lower gate-source voltages such as -2.5V or -4.5V compared to the standard -10V drive.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for consumer markets. The AO4801AL specifically addresses the need for integrated dual-channel solutions, reducing board space compared to using discrete single-channel devices while maintaining high current handling capabilities.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' dual P-channel MOSFETs with similar -30V ratings.

FAQ

What is the maximum junction temperature for the AO4801AL?

The maximum junction temperature (TJ) and storage temperature range is -55 to 150 °C.

How does the on-resistance vary with gate voltage?

The RDS(ON) is less than 42mΩ at VGS=-10V, less than 52mΩ at VGS=-4.5V, and less than 75mΩ at VGS=-2.5V.

Is the device tested for unclamped inductive switching?

Yes, the datasheet confirms that the AO4801AL undergoes 100% UIS testing.

AO4801AL_001AO4801AL_001

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