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The AO4801AL is a dual P-channel MOSFET from Alpha & Omega Semiconductor, packaged in an SOIC-8. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -5.6A at VGS=-10V. The device exhibits low on-resistance: less than 42mΩ at VGS=-10V, less than 52mΩ at VGS=-4.5V, and less than 75mΩ at VGS=-2.5V. It includes 100% UIS testing and gate resistance verification. Thermal characteristics include a maximum junction temperature of 150°C and a junction-to-lead thermal resistance (RθJL) of 62.5°C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets consumer market qualification standards, as critical life support applications are explicitly excluded from authorization by the manufacturer.
Select this component when a dual P-channel configuration is required within a compact SOIC-8 footprint. Ensure the application gate drive voltage aligns with the specified RDS(ON) performance curves, particularly noting the resistance increase at lower gate-source voltages such as -2.5V or -4.5V compared to the standard -10V drive.
This part belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for consumer markets. The AO4801AL specifically addresses the need for integrated dual-channel solutions, reducing board space compared to using discrete single-channel devices while maintaining high current handling capabilities.
No public confirmed substitute part numbers are documented in the provided datasheet. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' dual P-channel MOSFETs with similar -30V ratings.
The maximum junction temperature (TJ) and storage temperature range is -55 to 150 °C.
The RDS(ON) is less than 42mΩ at VGS=-10V, less than 52mΩ at VGS=-4.5V, and less than 75mΩ at VGS=-2.5V.
Yes, the datasheet confirms that the AO4801AL undergoes 100% UIS testing.