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The AO4807L is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of -30V, a continuous drain current of -6A at VGS=-10V, and an on-resistance of less than 35mΩ at VGS=-10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Verify the specific ordering suffix 'L' against the manufacturer's official documentation to confirm its exact definition, as datasheets may not explicitly detail suffix variations beyond electrical equivalence. Confirm RoHS compliance status and availability through authorized distribution channels prior to procurement.
Select this component for designs requiring a dual P-channel MOSFET with a -30V rating and -6A current capacity. Ensure the application logic levels align with the specified VGS thresholds. Verify thermal management requirements based on the provided junction-to-ambient resistance values for the target PCB layout.
The AO4807L belongs to the AO4807 product family from Alpha & Omega Semiconductor. It is a dual P-channel MOSFET designed for general-purpose switching applications. The 'L' suffix typically denotes a specific manufacturing or packaging variant within the standard AO4807 series, which shares identical electrical specifications.
AO4807
Yes, the AO4807L is electrically identical to the standard AO4807.
The maximum gate-source voltage rating is ±20V.
Yes, the device is 100% UIS tested.