AO4818BL_101

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-

SKU:9e5c9f9d4cf4 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：888pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4818BL_101

Overview

The AO4818BL_101 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of 30V and a continuous drain current of 8A at VGS=10V. Key electrical parameters include an RDS(ON) of less than 19mΩ at VGS=10V and less than 26mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-SOIC package.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
ESD protected design with 100% UIS and Rg testing verification.

Applications

Load switching
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and marking details. Confirm RoHS compliance status directly from the datasheet before procurement. Ensure the component meets all applicable export control regulations and legal requirements for your intended use case.

Selection Notes

Select this component for circuits requiring a dual N-channel MOSFET with a 30V rating. Evaluate thermal performance based on the specific board copper area and ambient conditions, as the junction-to-ambient resistance varies significantly with layout. Consider the low gate charge for high-frequency switching efficiency.

Part Context

This part belongs to the AO4818 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. The 'B' variant typically denotes specific electrical or packaging revisions within the product line. The base model shares similar trench technology features but may differ in exact parameter tolerances or testing standards.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and absolute maximum ratings if considering alternative manufacturers.