AO4832

AO4832

$0.20
  • Description:MOSFET 2N-CH 30V 10A 8SOIC
  • Series:-

SKU:be2daa3a870e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 10A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10A
  • Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:910pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4832

Overview

The AO4832 is a dual N-channel enhancement mode MOSFET utilizing advanced trench technology. It features a drain-source voltage of 30V and a continuous drain current of 10A at VGS=10V. The on-resistance is less than 13mΩ at VGS=10V and 17.5mΩ at VGS=4.5V. Packaged in an SOIC-8, it supports a maximum junction temperature of 150°C and has been tested for 100% UIS and Rg.

Feature Summary

  • Advanced trench technology provides low gate charge and excellent on-resistance.
  • Suitable for high-side switching in switch-mode power supplies (SMPS) and general-purpose applications.

Applications

  • High-side switching in SMPS
  • General-purpose power switching

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as multiple vendors produce identical part numbers. Confirm that the device meets RoHS standards if required by your design specifications. Ensure the package matches the SOIC-8 footprint and pinout defined in the official datasheet to guarantee compatibility with your PCB layout.

Selection Notes

Select this component for applications requiring a 30V dual N-channel configuration with low on-resistance. Consider the thermal characteristics and the 150°C maximum junction temperature limit. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance and efficiency in your circuit design.

Part Context

This component belongs to the family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It shares similar electrical characteristics and packaging with other devices in the series, designed for compact power management solutions. The dual configuration allows for efficient space utilization in multi-phase or bridge circuits.

Replacement Considerations

AO4832L is electrically identical to the AO4832 and serves as a direct replacement option.

FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 10A at VGS=10V.

Is the device tested for avalanche capability?

Yes, the AO4832 is 100% UIS (Unclamped Inductive Switching) tested.

What is the typical gate threshold voltage range?

The gate threshold voltage ranges from 1.5V to 2.5V.

AO4832AO4832
$0.20
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