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The AO4832 is a dual N-channel enhancement mode MOSFET utilizing advanced trench technology. It features a drain-source voltage of 30V and a continuous drain current of 10A at VGS=10V. The on-resistance is less than 13mΩ at VGS=10V and 17.5mΩ at VGS=4.5V. Packaged in an SOIC-8, it supports a maximum junction temperature of 150°C and has been tested for 100% UIS and Rg.
Verify the specific manufacturer source when sourcing this component, as multiple vendors produce identical part numbers. Confirm that the device meets RoHS standards if required by your design specifications. Ensure the package matches the SOIC-8 footprint and pinout defined in the official datasheet to guarantee compatibility with your PCB layout.
Select this component for applications requiring a 30V dual N-channel configuration with low on-resistance. Consider the thermal characteristics and the 150°C maximum junction temperature limit. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance and efficiency in your circuit design.
This component belongs to the family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It shares similar electrical characteristics and packaging with other devices in the series, designed for compact power management solutions. The dual configuration allows for efficient space utilization in multi-phase or bridge circuits.
AO4832L is electrically identical to the AO4832 and serves as a direct replacement option.
The maximum continuous drain current is 10A at VGS=10V.
Yes, the AO4832 is 100% UIS (Unclamped Inductive Switching) tested.
The gate threshold voltage ranges from 1.5V to 2.5V.