SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4862 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. utilizing AlphaMOS LV trench technology. It features a drain-source voltage of 30V and a continuous drain current of 4.5A at VGS=10V. The on-resistance is less than 50mΩ at VGS=10V and less than 68mΩ at VGS=4.5V. The device is housed in an SO-8 package with a maximum junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm packaging format and quantity. Ensure compliance with RoHS and REACH regulations as stated in the datasheet. Confirm that the component meets the intended thermal and electrical requirements for the target application before procurement.
Select this component for applications requiring dual N-channel MOSFETs in a small footprint. Consider the 30V rating and 4.5A continuous current capability. Evaluate the thermal resistance values based on the specific PCB copper area and airflow conditions, as these significantly impact power dissipation performance.
The AO4862 belongs to the AlphaMOS family of trench power MOSFETs from Alpha & Omega Semiconductor. This series focuses on low voltage applications, offering improved efficiency through reduced on-resistance and gate charge compared to standard planar technologies. The dual configuration allows for space-saving designs in bridge or high-side/low-side driver circuits.
No verified public substitute part numbers are documented in the provided source material. Consult official manufacturer cross-reference lists for potential alternatives.
The maximum gate-source voltage is ±20V.
Yes, the datasheet confirms that the device is 100% UIS tested.
The typical total gate charge (Qg) at VGS=10V is 4.05 nC.