AO4914_101

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-

SKU:05c269732b84 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：20.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：865pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4914_101

Overview

The AO4914 is a dual N-channel MOSFET integrated with a Schottky diode, utilizing advanced trench technology for low on-resistance and gate charge. It features two independent N-channel FETs (Q1 and Q2) each rated for a drain-source voltage of 30V and a continuous drain current of 8A at VGS=10V. The on-resistance is less than 20.5mΩ at VGS=10V and 28mΩ at VGS=4.5V. The co-packaged Schottky diode supports a forward current of 3A with a maximum forward voltage of 0.5V at 1A. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.

Feature Summary

Advanced trench technology provides excellent RDS(ON) performance and low gate charge characteristics.
Dual N-channel configuration enables compact synchronous rectifier designs for DC-DC converters.
Integrated Schottky diode parallel to the synchronous MOSFET enhances overall circuit efficiency.
ESD protected structure ensures robustness against electrostatic discharge events.

Applications

Synchronous rectification in DC-DC converters
Compact power switch modules
Efficiency-optimized power management circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status matches design requirements. Ensure storage conditions adhere to moisture sensitivity level specifications. Validate thermal management solutions align with specified junction-to-ambient resistance values. Check for any specific handling precautions outlined in the official documentation.

Selection Notes

Evaluate thermal dissipation capabilities based on specific board copper area and airflow conditions. Consider gate drive voltage levels to ensure optimal RDS(ON) performance. Assess switching frequency requirements against gate charge specifications. Verify compatibility with system voltage rails and current loads. Review safe operating area curves for transient load conditions.

Part Context

This component belongs to Alpha & Omega Semiconductor's discrete MOSFET portfolio, specifically designed for high-efficiency power switching applications. The integration of a Schottky diode distinguishes it from standard dual MOSFET packages by offering additional rectification functionality without extra board space.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official AOS documentation for potential cross-reference recommendations.

FAQ

What is the maximum continuous drain current for each MOSFET?

Each N-channel MOSFET supports a continuous drain current of 8A when the gate-source voltage is 10V.

How does the integrated Schottky diode improve performance?

The Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further by providing a low-loss path for body diode conduction.