ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.6A SC89-6
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：600mA, 500mA
- Rds On (Max) @ Id, Vgs：650mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：45pF @ 10V
- Power - Max：380mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89-6
- Grade：-
- Qualification：-
Download product information
Overview
The AO5600E is a P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The device is designed for high-efficiency power management applications requiring reliable performance in compact form factors. Regulatory compliance includes RoHS3 specification adherence and REACH status indicating it is not subject to REACH regulations. The component carries an ECCN classification of EAR99 and holds a Moisture Sensitivity Level (MSL) rating of 1, allowing for unlimited floor life under standard conditions.
Feature Summary
- P-channel enhancement mode operation utilizing trench technology for optimized electrical performance
- Compliance with RoHS3 specifications ensuring restricted substance limitations are met
- Moisture Sensitivity Level 1 classification supporting extended handling flexibility
Applications
- Power management circuits requiring P-channel switching capabilities
- Battery protection systems utilizing low on-resistance characteristics
- Load switch applications in portable electronic devices
Procurement Notes
Verify the specific manufacturer documentation for the AO5600E to confirm current production status and package availability. Cross-reference official datasheets for precise electrical parameters and thermal characteristics before integration. Ensure compliance with project-specific regulatory requirements regarding RoHS3 and REACH standards. Confirm that the supplied components match the exact part number designation to avoid functional mismatches in circuit design.
Selection Notes
Select the AO5600E when a P-channel MOSFET with low on-resistance is required for efficient power switching. Consider its MSL 1 rating for assembly processes without strict humidity control constraints. Evaluate the device against alternative P-channel options based on specific voltage and current requirements. Verify that the package type aligns with the printed circuit board layout and thermal management strategy of the target application.
Part Context
Alpha & Omega Semiconductor Inc. specializes in power semiconductor solutions, including MOSFETs and diodes. The AO5600E belongs to their portfolio of trench technology-based devices designed for high efficiency. The company maintains compliance with international environmental standards such as RoHS3. This component represents a standard offering within their discrete power transistor lineup for general-purpose switching applications.
Replacement Considerations
Publicly confirmed substitute part numbers for the AO5600E were not identified in the provided reference material. Verify compatibility with potential alternatives by comparing pin configurations, electrical ratings, and package dimensions against the original AO5600E specifications.
