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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A, 2.3A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：285pF @ 15V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6601 is a complementary enhancement mode field effect transistor utilizing advanced trench technology to deliver low gate charge and excellent on-resistance. The N-Channel device supports a drain-source voltage of 30V with a continuous drain current of 3.4A at VGS=10V, while the P-Channel counterpart handles -30V and -2.3A respectively. Both channels feature low RDS(ON) values across various gate voltages, enabling efficient power inversion in high-speed applications.
Feature Summary
- Complementary N- and P-channel MOSFETs integrated into a single TSOP6 package
- Advanced trench technology for optimized switching performance
- Low gate charge characteristics suitable for high-frequency operation
Applications
- High-speed power inverters
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the specific datasheet revision (e.g., Rev 6.1) matches your design requirements. Confirm that the TSOP6 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the junction-to-ambient resistance specified in the absolute maximum ratings table.
Selection Notes
Select this component when a compact complementary pair is required for low-voltage switching applications. Evaluate the RDS(ON) specifications against your load current needs at the intended operating gate voltage. Consider the thermal constraints defined by the maximum junction temperature and power dissipation limits.
Part Context
This part belongs to Alpha & Omega Semiconductor's complementary MOSFET lineup. It is designed as a cost-effective solution for consumer electronics where space and efficiency are critical. The TSOP6 package allows for surface-mount assembly, facilitating automated manufacturing processes.
Replacement Considerations
Check pinout compatibility before substitution. Verify that any alternative device meets or exceeds the 30V breakdown voltage and current handling capabilities. Ensure the replacement package type matches the existing board layout to avoid mechanical integration issues.
