AO8801

Overview

The AO8801 is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -20V and a continuous drain current of -4.7A at VGS = -4.5V. It is housed in an 8-TSSOP surface-mount package. Key electrical characteristics include an on-resistance of less than 42mΩ at VGS = -4.5V and an ESD rating of 3000V HBM.

Feature Summary

• Dual P-Channel Enhancement Mode Field Effect Transistor
• Advanced Trench Technology for Low On-Resistance
• Low Gate Charge Operation
• ESD Protected

Applications

• Load Switch Applications
• PWM Applications

Procurement Notes

Verify the specific ordering suffix when sourcing components, as variants such as AO8801L exist. Confirm that the received parts match the exact manufacturer part number and package type specified in the design documentation. Ensure compliance with RoHS and Sony 259 specifications if required by the project standards.

Selection Notes

Select this component for applications requiring dual P-channel switching with low gate drive requirements. Consider the thermal resistance values and package limitations when designing heat dissipation strategies. Verify that the operating voltage and current levels remain within the absolute maximum ratings defined in the datasheet.

Part Context

The AO8801 belongs to the family of dual P-channel MOSFETs from Alpha & Omega Semiconductor. It shares functional similarities with other devices in the series but is distinct in its specific pinout and electrical parameters. The standard product is lead-free and meets environmental specifications.

Replacement Considerations

AO8801L is electrically identical to the AO8801 and serves as a direct replacement option.