AO8807L

Description：MOSFET P-CH 8TSSOP
Series：*
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:d077d8c8ce06 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 8TSSOP
Series：*
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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AO8807L

Overview

The AO8807L is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low gate charge and operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -12V and a continuous drain current of -6.5A at VGS = -4.5V. On-resistance values are less than 20mΩ at VGS = -4.5V, less than 24mΩ at VGS = -2.5V, and less than 30mΩ at VGS = -1.8V. It is housed in an 8-TSSOP package.

Feature Summary

Dual P-Channel Enhancement Mode Field Effect Transistor configuration
Advanced trench technology for excellent on-resistance and low gate charge
Suitable for use as a load switch
ESD protected

Applications

Load switching applications

Procurement Notes

Verify the component status before procurement as availability may vary. Confirm that the ordering suffix matches the required specifications, noting that standard products meet RoHS and Sony 259 specifications while L variants offer green product options. Ensure compatibility with the 8-TSSOP surface mount package and validate thermal requirements against the specified junction-to-ambient resistance values.

Selection Notes

Select this component for applications requiring dual P-channel MOSFETs with low gate drive voltages down to 1.8V. Consider the specific on-resistance thresholds at different gate voltages (-4.5V, -2.5V, and -1.8V) when designing the control circuitry. Evaluate the thermal performance based on the junction-to-ambient resistance and power dissipation limits under your specific board design conditions.

Part Context

The AO8807L belongs to the family of dual P-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. These devices are designed using advanced trench technology to provide superior on-resistance characteristics and low gate charge. The AO8807L specifically targets load switch applications where efficient power management and low voltage operation are critical requirements.