AO8810

Overview

The AO8810 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of 20V and a continuous drain current of 7A at VGS = 4.5V. On-resistance values are less than 20mΩ at 4.5V, less than 24mΩ at 2.5V, and less than 32mΩ at 1.8V. It is housed in an 8-TSSOP surface-mount package with a maximum power dissipation of 1.5W and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Advanced trench technology for optimized on-resistance and switching performance
• Capable of logic-level gate drive operation down to 1.8V
• Integrated electrostatic discharge protection rated at 2000V HBM

Applications

• Load switch applications
• Pulse-width modulation (PWM) control circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Suffixes such as 'L' may indicate green product compliance or lead-free packaging variations while maintaining electrical identity. Confirm RoHS and Sony 259 specification adherence through the latest datasheet revision to ensure regulatory compliance for the target assembly process.

Selection Notes

Select this component when a compact dual N-channel configuration is required for low-voltage power management. The low gate charge facilitates efficient driving from standard logic interfaces. Ensure the thermal design accommodates the 1.5W power dissipation limit in the 8-TSSOP package under expected operating conditions.

Part Context

This part belongs to the AO88xx series of common-drain dual N-channel MOSFETs from Alpha & Omega Semiconductor. It shares architectural similarities with parts like the AO8808A but offers higher current handling capabilities. The series is designed for space-constrained portable electronics requiring efficient power switching.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters against alternative dual N-channel MOSFETs if sourcing constraints require substitution.