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The AO8810#A is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 7A. The device utilizes an 8-TSSOP surface-mount package with a maximum power dissipation of 1.5W. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 1.1V maximum at 250µA, a total gate charge (Qg) of 14nC maximum at 4.5V, and an input capacitance (Ciss) of 1295pF maximum at 10V. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix #A against the manufacturer's official datasheet to confirm pinout and electrical specifications match the design requirements. Confirm component status as discontinued or active through authorized distributors before finalizing procurement plans.
Select this component when a dual N-channel configuration is required within a compact 8-TSSOP footprint. Ensure the application voltage remains below 20V and that the thermal environment supports the 1.5W power dissipation limit without exceeding the 150°C junction temperature rating.
This part belongs to the AO880 series of dual MOSFET arrays from Alpha & Omega Semiconductor. These devices are designed to replace discrete single FET solutions, reducing board space and simplifying assembly in low-power digital logic and power switching environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual N-channel MOSFETs in the 20V/7A class only after cross-referencing pinouts and electrical limits.