AO8810#A

AO8810#A

  • Description:MOSFET 2N-CH 20V 7A 8TSSOP
  • Series:-

SKU:2d02fa7ad8c5 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 7A 8TSSOP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:7A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1295pF @ 10V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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AO8810#A

Overview

The AO8810#A is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 7A. The device utilizes an 8-TSSOP surface-mount package with a maximum power dissipation of 1.5W. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 1.1V maximum at 250µA, a total gate charge (Qg) of 14nC maximum at 4.5V, and an input capacitance (Ciss) of 1295pF maximum at 10V. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Dual common-drain configuration for efficient space-constrained designs
  • Logic-level gate drive capability for direct microcontroller interfacing
  • Surface-mount construction in an 8-TSSOP package

Applications

  • Low-voltage load switching applications
  • Power management circuits requiring dual channel control
  • Battery protection systems

Procurement Notes

Verify the specific ordering suffix #A against the manufacturer's official datasheet to confirm pinout and electrical specifications match the design requirements. Confirm component status as discontinued or active through authorized distributors before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact 8-TSSOP footprint. Ensure the application voltage remains below 20V and that the thermal environment supports the 1.5W power dissipation limit without exceeding the 150°C junction temperature rating.

Part Context

This part belongs to the AO880 series of dual MOSFET arrays from Alpha & Omega Semiconductor. These devices are designed to replace discrete single FET solutions, reducing board space and simplifying assembly in low-power digital logic and power switching environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual N-channel MOSFETs in the 20V/7A class only after cross-referencing pinouts and electrical limits.

AO8810#AAO8810#A

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