AO8820

Overview

The AO8820 is a common-drain dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a 12V maximum VGS rating. The device features an ESD-protected structure suitable for uni-directional or bi-directional load switch applications. Key electrical parameters include a drain-source voltage of 20V, a continuous drain current of 7A at VGS=10V, and a maximum junction temperature range of -55°C to 150°C.

Feature Summary

• Common-drain configuration facilitates use as a uni-directional or bi-directional load switch
• Advanced trench technology provides excellent RDS(ON) performance across various gate drive levels
• Integrated ESD protection enhances component reliability in sensitive circuits

Applications

• Uni-directional load switching
• Bi-directional load switching
• Low voltage power management systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the received components match the exact part number specifications regarding package type and electrical ratings. Ensure compliance with applicable export control regulations and legal requirements during the purchasing process.

Selection Notes

Select this component when designing circuits requiring a dual N-channel MOSFET with a common-drain topology. Evaluate the on-resistance values at specific gate-source voltages (1.8V, 2.5V, 4.5V, 10V) to ensure compatibility with the system's logic levels. Consider the thermal resistance characteristics relative to the intended PCB copper area and ambient conditions.

Part Context

This component belongs to the AlphaSGT™ series of power MOSFETs from Alpha & Omega Semiconductor. The company specializes in power management integrated circuits and discrete semiconductors for consumer electronics, computing, telecommunications, and industrial systems. The AO8820 represents their focus on high-efficiency solutions using advanced trench technology.

Replacement Considerations

AO8800: Common-drain dual N-channel enhancement mode field effect transistor.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGS) rating is ±12V.

How does the on-resistance vary with gate voltage?

The on-resistance decreases as the gate-source voltage increases, ranging from less than 50mΩ at 1.8V to less than 21mΩ at 10V.

Is the device protected against electrostatic discharge?

Yes, the AO8820 is explicitly described as being ESD protected.