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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7.6A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.6A
- Rds On (Max) @ Id, Vgs：23mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：630pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO9926BL_101 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a maximum gate-source voltage rating of 12V. The device features a drain-source breakdown voltage of 20V and a continuous drain current of 7.6A at VGS=10V. On-resistance values are specified as less than 23mΩ at VGS=10V, 26mΩ at VGS=4.5V, 34mΩ at VGS=2.5V, and 52mΩ at VGS=1.8V. It is housed in an SOIC-8 package.
Feature Summary
- Advanced trench technology for excellent on-resistance and low gate charge
- Capable of operation with gate voltages as low as 1.8V
- Suitable for use as a uni-directional or bi-directional load switch
Applications
- Uni-directional load switching
- Bi-directional load switching
- PWM applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure compliance with RoHS standards and lead-free requirements as defined in the product datasheet. Confirm that the component meets all applicable export control regulations and legal requirements before procurement.
Selection Notes
Select this component for applications requiring low gate drive voltage capability down to 1.8V. Evaluate thermal performance based on the junction-to-ambient resistance of 90°C/W in still air. Consider the 20V drain-source voltage limit and 7.6A continuous current rating when designing the circuit layout and heat dissipation strategy.
Part Context
This part belongs to the AO9926B series from Alpha & Omega Semiconductor. It is a dual N-channel MOSFET designed for power management applications. The BL suffix typically indicates a green product ordering option compliant with environmental standards, though specific suffix definitions should be verified in the manufacturer's catalog.
Replacement Considerations
Potential substitutes include other 20V dual N-channel MOSFETs such as the AO9926E or AO9926B. Verify pinout compatibility and electrical parameters like RDS(ON) and VGS(th) before substitution.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGS) rating is ±12V.
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(th)) ranges from 0.4V to 1.1V under standard test conditions.
Is the device suitable for high-frequency switching?
Yes, the device features low gate charge and fast switching times, making it suitable for PWM applications.
