AOB410L

AOB410L

$1.38
  • Description:MOSFET N-CH 100V TO263
  • Series:SDMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk

SKU:d37a2eabdd00 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V TO263
  • Series:SDMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):7V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:129 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:7950 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):1.9W (Ta), 333W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB410L

Overview

The AOB410L is a 100V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. utilizing SDMOS™ trench technology. It features a maximum drain current of 150A and an on-state resistance below 6.5mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to 175°C and is supplied in a TO-263 (D2PAK) surface mount package.

Feature Summary

  • SDMOS™ trench technology provides low gate charge and low reverse recovery characteristics for high efficiency.
  • Designed for PWM, load switching, and general-purpose applications with controlled switching behavior.
  • Subjected to 100% Unclamped Inductive Switching (UIS) testing.

Applications

  • Pulse Width Modulation (PWM)
  • Load switching
  • General purpose applications

Procurement Notes

Verify the specific ordering suffix 'L' against official Alpha & Omega Semiconductor documentation to confirm compliance with Green Product specifications. Ensure the selected package variant matches the required thermal management strategy for the intended application environment.

Selection Notes

Select this component based on its 100V rating and 150A continuous current capability. Evaluate the thermal resistance parameters relative to the system's heatsinking requirements. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the SDMOS™ family of N-Channel MOSFETs from Alpha & Omega Semiconductor. It shares design similarities with the AOT410L, differing primarily in packaging format. The product line emphasizes high current density and low conduction losses for power electronics.

Replacement Considerations

The AOT410L is electrically identical but utilizes a TO-220 tube package instead of the TO-263 tape and reel format. Verify mechanical footprint compatibility before substitution.

FAQ

Is the AOB410L tested for unclamped inductive switching?

Yes, the datasheet confirms that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

What is the maximum operating junction temperature?

The maximum junction and storage temperature range is -55°C to 175°C.

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$1.38
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