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Product Detailed Parameters
- Description：MOSFET N-CH 100V 22.5A/80A TO263
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：22.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB66920L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing AlphaSGT™ trench technology. It features a drain-source voltage of 100V and a continuous drain current of 80A at VGS=10V. The device exhibits low on-resistance, with RDS(ON) less than 8mΩ at VGS=10V and less than 10.5mΩ at VGS=4.5V. Packaged in TO-263 (D2PAK), it supports high-frequency switching and synchronous rectification applications.
Feature Summary
- Utilizes AlphaSGT™ trench technology for optimized performance
- Features logic-level driving capability for efficient gate control
- Demonstrates excellent figure of merit through low gate charge and on-resistance
- Includes 100% unclamped inductive switching (UIS) testing
Applications
- High frequency switching circuits
- Synchronous rectification systems
- General purpose power management
Procurement Notes
Verify the specific ordering suffix to confirm the package type and reel configuration. Ensure the component meets RoHS and halogen-free compliance requirements for your manufacturing process. Confirm that the thermal design accounts for the junction-to-case resistance values provided in the datasheet to maintain safe operating temperatures during operation.
Selection Notes
Select this component when a 100V rating and high current capacity are required in a surface-mount form factor. The logic-level drive characteristic makes it suitable for controllers operating at lower gate voltages. Consider the thermal dissipation capabilities relative to the application's ambient temperature and board layout constraints.
Part Context
This part belongs to the AlphaSGT™ series of N-channel MOSFETs designed for efficiency and reliability. It shares architectural similarities with other devices in the family but offers specific electrical characteristics tailored for high-current applications. The TO-263 package provides robust thermal performance compared to smaller surface-mount options.
Replacement Considerations
Check for electrically identical alternatives within the same product line. Verify pinout compatibility and thermal resistance specifications before substituting. Ensure any replacement part meets the same voltage and current ratings for the intended circuit application.
