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The AOC2413 is an 8V P-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.2V while maintaining a 5V maximum VGS rating. Key electrical parameters include a drain-source voltage of -8V, a continuous source current of -3.5A at 25°C, and a typical RDS(ON) of less than 28mΩ at VGS=-2.5V. The device features HBM Class 3A ESD protection and is housed in an AlphaDFN 1.57x1.57_4 package.
Verify the specific datasheet revision (Rev.1.0 dated December 2013) matches your design requirements. Confirm that the component is designated for the consumer market and not authorized for life support devices or systems. Ensure the AlphaDFN 1.57x1.57_4 package footprint aligns with your PCB layout constraints before finalizing procurement.
Select this component when an 8V P-Channel MOSFET is required for low-voltage applications. It is suitable for designs needing operation with gate drive voltages down to 1.2V. Consider the thermal characteristics and package size if space is limited. Verify that the continuous current rating of -3.5A meets the load requirements under your specific ambient temperature conditions.
The AOC2413 belongs to the Alpha & Omega Semiconductor lineup of small signal MOSFETs designed for consumer markets. It complements other low-voltage P-Channel options by offering enhanced performance through trench technology. This series focuses on minimizing on-resistance and gate charge to improve efficiency in portable and battery-operated electronic devices.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for direct replacements.
The maximum gate-source voltage (VGS(MAX)) rating is 5V.
Yes, it is designed to operate with gate voltages as low as 1.2V.
The device features typical ESD protection rated at HBM Class 3A.