AOC3860C

Overview

The AOC3860C is a 12V Common-Drain Dual N-Channel MOSFET utilizing Trench Power MOSFET technology. It features ultra-low on-resistance, with RSS(ON) values of less than 3.5mΩ at VGS=4.5V, less than 3.75mΩ at VGS=3.8V, less than 4.3mΩ at VGS=3.1V, and less than 5mΩ at VGS=2.5V. The device supports a DC source current of 25A and a pulse source current of 40A. It includes integrated ESD protection rated for HBM Class 2. The component is housed in an AlphaDFN 3.05x1.77B_6 package and is available in tape and reel form with a minimum order quantity of 8000 units.

Feature Summary

• Trench Power MOSFET technology providing ultra-low on-resistance
• Integrated ESD protection to improve battery performance and safety
• Common drain configuration designed for circuit simplicity

Applications

• Battery protection switch
• Mobile device battery charging and discharging
• Typical ESD protection

Procurement Notes

Verify the specific ordering suffix 'C' against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the AlphaDFN 3.05x1.77B_6 package dimensions match the target PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component when low voltage operation requires minimal conduction loss. The common-drain topology simplifies design compared to standard configurations. Verify that the gate drive voltage meets the specified thresholds for the desired on-resistance performance level.

Part Context

The AOC3860C belongs to the Alpha & Omega Semiconductor lineup of dual N-channel MOSFETs. It shares the common-drain architecture with related models such as the AOC3860 and AOC3870 series, offering similar structural benefits for power management applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative components based on matching voltage ratings, current capabilities, and package compatibility.