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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 40A 10DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：40A (Ta)
- Rds On (Max) @ Id, Vgs：1.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-AlphaDFN (2.52x2.52)
- Grade：-
- Qualification：-
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Overview
The AOCA33103E is a dual N-channel MOSFET in a common-drain configuration, utilizing AlphaDFNTM 2.52x2.52_10 packaging. It features an ultra-low on-resistance of less than 1.8mΩ at VGS=4.5V and 2.8mΩ at VGS=2.5V. The device supports a source-source breakdown voltage of 12V and a continuous DC source current of 40A. Key electrical parameters include a gate threshold voltage ranging from 0.5V to 1.3V at 25°C, total gate charge of 45nC, and forward transconductance of 62S. Thermal performance includes a maximum junction temperature of 150°C and a thermal resistance (RqJA) of 110°C/W.
Feature Summary
- Trench Power MOSFET technology for low on-resistance
- Common drain configuration simplifies circuit design
- RoHS and Halogen-Free compliant construction
Applications
- Battery protection switches
- Mobile device battery charging circuits
- Mobile device battery discharging circuits
Procurement Notes
Verify the specific orderable part number against the manufacturer's official documentation before purchasing. Confirm that the package type matches the AlphaDFNTM 2.52x2.52_10 specification. Ensure compliance with RoHS and Halogen-Free requirements if mandated by project standards. Review the absolute maximum ratings to confirm suitability for the intended operating conditions.
Selection Notes
Select this component when a compact dual N-channel solution with common-drain topology is required. The low on-resistance at various gate voltages makes it suitable for applications where drive voltage may vary. Consider the 12V breakdown voltage limit and 40A current rating during thermal management planning. Verify that the AlphaDFNTM package fits the available PCB footprint constraints.
Part Context
This component belongs to the Alpha & Omega Semiconductor lineup of trench power MOSFETs. It is designed specifically for mobile electronics and battery management systems. The common-drain arrangement allows for simplified switching control compared to standard high-side or low-side configurations.
Replacement Considerations
No public substitute part numbers are documented in the provided datasheet. Consult the manufacturer for potential cross-reference options if availability is constrained.
