AOD11S60

AOD11S60

$2.52
  • Description:MOSFET N-CH 600V 11A TO252
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0933a925b915 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 11A TO252
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:399mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id:4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):208W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD11S60

Overview

The AOD11S60 is a 600V N-Channel Power MOSFET in a TO-252 (DPAK) package. It features a maximum continuous drain current of 11A and a peak pulsed current of 45A. The device has a maximum on-resistance of 0.399Ω at VGS=10V and ID=3.8A, with a typical gate charge of 11nC. It supports a maximum power dissipation of 208W at case temperatures of 25°C. The component includes an integrated body diode and is rated for a junction temperature range of -55°C to 150°C.

Feature Summary

  • Fabricated using advanced aMOSTM high voltage process for robust switching performance
  • Guaranteed avalanche capability with 100% UIS testing
  • Low total gate charge and output capacitance for efficient drive requirements
  • Integrated body diode with specified reverse recovery characteristics

Applications

  • Offline power supply designs
  • Switching applications requiring high voltage isolation
  • General purpose power management circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free material declarations prior to integration into production assemblies. Check for any recent product change notices regarding pinout or thermal resistance values.

Selection Notes

Select this component when a 600V rating is required alongside moderate current handling capabilities in a surface-mount DPAK footprint. Evaluate the thermal impedance data against the target application's heatsinking strategy to ensure junction temperatures remain within the 150°C limit during operation.

Part Context

This part belongs to the Alpha & Omega Semiconductor aMOS™ family of power transistors. These devices are designed to offer improved performance metrics compared to standard MOSFETs, specifically targeting efficiency improvements in offline power conversion topologies through optimized gate charge and on-resistance profiles.

Replacement Considerations

The AOI11S60 is documented as a compatible variant within the same datasheet specification.

AOD11S60AOD11S60
$2.52
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