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The AOD11S60 is a 600V N-Channel Power MOSFET in a TO-252 (DPAK) package. It features a maximum continuous drain current of 11A and a peak pulsed current of 45A. The device has a maximum on-resistance of 0.399Ω at VGS=10V and ID=3.8A, with a typical gate charge of 11nC. It supports a maximum power dissipation of 208W at case temperatures of 25°C. The component includes an integrated body diode and is rated for a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free material declarations prior to integration into production assemblies. Check for any recent product change notices regarding pinout or thermal resistance values.
Select this component when a 600V rating is required alongside moderate current handling capabilities in a surface-mount DPAK footprint. Evaluate the thermal impedance data against the target application's heatsinking strategy to ensure junction temperatures remain within the 150°C limit during operation.
This part belongs to the Alpha & Omega Semiconductor aMOS™ family of power transistors. These devices are designed to offer improved performance metrics compared to standard MOSFETs, specifically targeting efficiency improvements in offline power conversion topologies through optimized gate charge and on-resistance profiles.
The AOI11S60 is documented as a compatible variant within the same datasheet specification.