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The AOD1N60M is a surface-mount N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a 600V drain-source voltage rating and a continuous drain current of 1.3A at case temperature. The device utilizes advanced trench technology to achieve low on-resistance, specified as 9 ohms at 650mA with a 10V gate drive. Packaged in a TO-252 (DPAK) housing, it supports a junction temperature range from -50°C to 150°C and offers a maximum power dissipation of 45W.
Verify the exact suffix 'M' against official Alpha & Omega Semiconductor datasheets, as standard listings often reference 'AOD1N60'. Confirm RoHS compliance status and package variations such as tape-and-reel quantities directly with the manufacturer or authorized distributors to ensure supply chain accuracy.
Select this component for designs requiring high-voltage isolation in compact surface-mount layouts. Evaluate thermal management requirements given the 45W dissipation limit in the TO-252 package. Ensure gate drive voltages align with the logic-level threshold specifications for efficient switching operation.
This part belongs to the AOD series of N-channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for general-purpose power switching applications. The manufacturer specializes in power management solutions, including MOSFETs and ICs, serving industrial and consumer electronics markets globally.
Check for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains similar on-resistance and gate charge characteristics to ensure circuit performance parity.