AOD2908

$1.07

Description：MOSFET N-CH 100V 9A/52A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:95593367695b Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 9A/52A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1670 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD2908

Overview

The AOD2908 is a 100V N-Channel MOSFET utilizing Trench technology for high-frequency switching. It features a maximum drain-source voltage of 100V and a continuous drain current of 20A at 25°C case temperature. The on-resistance is less than 13.5mΩ at VGS=10V and ID=20A. Total gate charge is 27nC max at 10V. Power dissipation reaches 50W at 25°C case temperature. The device operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Optimized Trench MOSFET technology minimizes conduction and switching power losses through low RDS(ON) and capacitance values.
Validated for high reliability with 100% UIS (Unclamped Inductive Switching) and Gate Resistance testing.

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific package variant, as the datasheet indicates TO252 (DPAK). Confirm RoHS compliance status and check for any recent design revisions or lifecycle notices directly from Alpha & Omega Semiconductor documentation before finalizing procurement plans.

Selection Notes

Select this component for applications requiring efficient high-frequency switching in consumer and industrial environments. Ensure thermal management aligns with the specified junction-to-case resistance and derating curves. Verify that the required gate drive voltage supports the optimal on-resistance performance characteristics.

Part Context

This part belongs to the AOS N-Channel MOSFET family designed for general-purpose power switching. It utilizes advanced trench gate technology to achieve superior performance metrics compared to standard planar devices, specifically targeting efficiency improvements in DC-DC conversion topologies.